IRLZ44NSPBF-VB TO-263 (D2PAK) N-Channel Power MOSFET

IRLZ44NSPBF-VB TO-263 (D2PAK) N-Channel Power MOSFET Transistor

The IRLZ44NSPBF-VB is an N-channel power MOSFET designed for high-current and high-power switching applications, featuring logic-level gate drive capability. With a drain-to-source voltage rating of 60V and a continuous drain current of up to 50A, it is widely used in motor drivers, switching power supplies, inverter circuits, and high-current switching applications.

Its TO-263 (D2PAK) surface-mount package provides efficient heat dissipation and enables compact, reliable PCB designs. Thanks to its logic-level gate structure, the MOSFET can be directly driven by microcontrollers and low-voltage gate drivers. Low RDS(on), fast switching characteristics, and high efficiency make it suitable for demanding power applications.

IRLZ44NSPBF-VB Technical Specifications:

• N-channel power MOSFET

• Drain-to-source voltage (VDS): 60V

• Continuous drain current (ID): 50A

• Maximum power dissipation (PD): 150W

• Low on-resistance RDS(on): 32mΩ @ VGS = 10V, 35mΩ @ VGS = 4.5V

• Gate threshold voltage VGS(th): 1V – 3V (typical 3V @ 250µA)

• Total gate charge (Qg): 60nC @ 5V

• Input capacitance (Ciss): 3nF

• Output capacitance (Coss): 1nF

• Operating temperature range: -55°C to +175°C

• Package type: TO-263 (D2PAK, SMD)

Useful Links / Documents:

• Datasheet
• EasyEDA Model

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